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PDF STN2NE06 Data sheet ( Hoja de datos )
| Número de pieza | STN2NE06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STN2NE06
N-CHANNEL 60V - 0.18Ω - 2A - SOT-223
STripFET™ POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STN2NE06
60 V < 0.25 Ω
2A
s TYPICAL RDS(on) = 0.18 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
www.DataSheet4U.com
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
IDM(•)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1999
Va l u e
Unit
60 V
60 V
± 20
V
2A
1.3 A
8A
2.5
0.02
W
W /o C
6
-65 to 150
150
( 1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STN2NE06
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STN2NE06.PDF ] | |
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