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PDF 2SB564A Data sheet ( Hoja de datos )
| Número de pieza | 2SB564A | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
| Logotipo |  |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB564A
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
www.DataSheet4CU.ocollmector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-30
-25
-5
-1
800
+150
-55 to +150
Unit
V
V
V
A
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -30
Collector-Emitter Breakdown Voltage
BVCEO -25
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
ICBO
VCE(sat)
VBE(sat)
hFE
-
-
-
70
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
110
18
Max
-
-
-
-100
-0.5
-1.2
400
-
-
Unit
V
V
V
nA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-10mA, IB=0
IE=-100µA, IC=0
VCB=-30V, IE=0
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-6V, f=100MHz
VCB=-6V, f=1MHz
Classification of hFE
Rank
O
Range
70~140
Y
120~240
GR
200~400
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