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PDF STP30NS15LFP Data sheet ( Hoja de datos )
| Número de pieza | STP30NS15LFP | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP30NS15LFP
N-CHANNEL 150V - 0.085 Ω - 10A TO-220FP
MESH OVERLAY™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP30NS15LFP 150 V
<0.1Ω
10 A
s TYPICAL RDS(on) = 0.085Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced
family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
www.DataSheet4U.com
APPLICATIONS
s SWITCHING “S” CAPACITOR
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS(1) Single Pulse Avalanche Energy
dv/dt (2) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
July 2003
.
Value
150
150
± 15
10
7
40
30
0.2
300
2.4
Unit
V
V
V
A
A
A
W
W/°C
mJ
V/ns
-55 to 175
°C
(1) Starting Tj = 25 oC, ID = 15A, VDD= 75V
(2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/9
1 page  
Normalized Gate Threshold Voltage vs Temperature
STP30NS15LFP
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP30NS15LFP.PDF ] | |
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| STP30NS15LFP | N-CHANNEL Power MOSFET | STMicroelectronics |
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