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PDF CMM1431-SM Data sheet ( Hoja de datos )
| Número de pieza | CMM1431-SM | |
| Descripción | Power Amplifier | |
| Fabricantes | Celeritek | |
| Logotipo |  |
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Advanced Product Specifications
October 2003
(1 of 4)
Features
❏ 32.2 dBm (Typ.) Saturated Output Power
❏ 30.5 dB (Typ.) Linear Gain
❏ Fully Matched
❏ Unconditionally Stable
❏ Low-Cost, Surface Mount Package
❏ Optimum Thermal Dissipation
Applications
❏ Ku-Band VSAT Transmit Subsystems
CMM1431-SM
13.50 to 14.50 GHz
1.5 Watt Power Amplifier
Pin Functional Diagram
Vdd 1
GROUND 2
RF IN 3
GROUND 4
Vgg 5
10 Vdd
9 GROUND
8 RF OUT
7 GROUND
6 Vgg
Description
The CMM1431-SM is a four-stage pHEMT GaAs
MMIC power amplifier that is ideally suited for transmit sub-
systems designed for Ku-Band VSAT applications. The
CMM1431-SM provides 30.5 dB linear gain and delivers 1.5
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watts of output power at saturation operating from 13.50 to
14.50 GHz frequency.
The unconditional stability and internal matching
provides for reduction of external components making this
product a simple and low-cost solution. The low-cost, 6mm x
6mm x 1.6mm surface mount package, offers the same excel-
lent RF and thermal properties as a typical flange package.
Electrical Characteristics (T = +25°C, Vd = 7V, Idq = 770mA)
Parameter
Condition
Frequency Range
Output Power
@ 1dB compression
Saturated Output Power
Pin = 5.0 dBm
Saturated Output Power Variation Over operating frequency
Linear Gain
Linear Gain Variation
Over operating frequency
Input Reflection Coefficient
Output Reflection Coefficient
Gate Supply Voltage
Idq = 770 mA
Drain Current
At Saturation
Power Added Efficiency
At Saturation
Min
13.50
30.5
31.2
27.0
-1.1
22
Typ
31.5
32.2
0.5
30.5
1.0
-10.0
-7.0
-0.9
900
26
Max
14.50
1.0
34.0
3.0
-0.7
980
Units
GHz
dBm
dBm
dBm
dB
dB
dB
dB
Volts
mA
%
Electrical Specifications (TA = -40°C to +75°C)
Parameter
Saturated Output Power
Linear Gain
Stability
Condition
Variation from Room Temperature
Variation from Room Temperature
Min Typ Max
-0.5
-2.5 3.5
Unconditionally stable
Units
dBm
dB
Maximum Ratings (TA = -40°C to +75°C) Operation outside these limits can cause permanent damage.
Parameter
Drain Voltage (+Vdd)
Gate Voltage (Vgg)
Quiescent Current (Idq)
Gate Current (Ig)
Typ
8.5
-3.0
1000
5
Units
Volts
Volts
mA
mA
Parameter
RF Input Power (Pin)
Dissipated Power (Pdiss)
Storage Temperature
Operating Backside Temperature
Typ
7.0
7.2
-50 to +150
-40 to +75
Units
dBm
Watts
°C
°C
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CMM1431-SM.PDF ] | |
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