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PDF SXA-389BZ Data sheet ( Hoja de datos )
| Número de pieza | SXA-389BZ | |
| Descripción | Medium Power GaAs HBT Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-
mountable plastic package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-
CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
Typical OIP3, P1dB, Gain
50
45
40
35
30
25
20
15
10
5
0
www.DataSheet4U.com
850 MHz
OIP3
P1dB
Gain
1960 MHz 2140 MHz 2450 MHz
SXA-389B
SXA-389BZ
Pb RoHS Compliant
& Green Package
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
• Now Available in Leed Free, RoHS Compliant, &
Green Packaging
• Lower Rth for increased MTTF
108
hrs.
at
T
Lead
=
85°C
• On-chip Active Bias Control, Single 5V Supply
• Excellent Linearity:
+43 dBm typ. OIP3 at 1960 MHz
• High P1dB : +25 dBm typ.
• High Gain: +18.5 dB at 850 MHz
• Efficient: consumes only 575 mW
Applications
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25°C
P1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
Units
dBm
Min.
24
Typ.
25
25
25
25
Max.
S21 Small signal gain
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
18.4
dB
12.5
13.6
13.5
15
12.8
S11 Input VSWR
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
-
1.2:1
1.3:1
1.2:1
1.2:1
2.0:1
OIP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dBm
41
43
39 42
41
NF Noise Figure
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dB
4.5
4.8 6.3
5.0
5.7
ID Device Current
Vcc = 5V
mA 90 115 135
PDISS
Operating Dissipated Power
mW
575
Rth, j-l
Thermal Resistance (junction - lead)
° C/W
70
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102915 Rev D
1 page  
SXA-389B ¼ W GaAs HBT Amplifier
2450 MHz Application Circuit Data, VCC= 5V, ID= 115mA
Note: Tuned for Output IP3
30
28
26
24
22
20
2 .4
P1dB vs. Frequency
2 .4 2
2 .4 4
2 .4 6
GHz
25C
85C
-4 0 C
2 .4 8
2 .5
0
-5
-10
-15
-20
-25
-30
-35
2 .4
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
S11
S12
S22
2 .4 2
2 .4 4
2 .4 6
GHz
2 .4 8
2 .5
Third Order Intercept vs. Tone Power
Frequency = 2.45 GHz
45
25C
43 85C
-40C
41
39
37
35
0 2 4 6 8 10 12 14 16 18
POUT per tone (dBm)
20
18
16
14
12
10
2 .4
Gain vs. Frequency
25C
85C
-40C
2 .4 2
2 .4 4
2 .4 6
GHz
2 .4 8
2 .5
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
45
25C
43 85C
-40C
41
39
37
35
2 .4
2.42
2.44
2 .4 6
GHz
2 .4 8
2 .5
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102915 Rev D
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SXA-389BZ.PDF ] | |
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