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PDF SPF-2086TK Data sheet ( Hoja de datos )
| Número de pieza | SPF-2086TK | |
| Descripción | Low Noise pHEMT GaAs FET | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
35
30
25
20
15
10
5
www.DataSheet4U.com
0
0
Typical Gain Performance
3v, 20mA
5v, 40mA
Gmax
Product Features
• 22 dB Gmax at 1.9 GHz
• 0.4 dB FMIN at 1.9 GHz
• +32 dBm Output IP3
• +20 dBm Output Power at 1dB Compression
Applications
Gain • LNA for Analog and Digital Wireless Systems
• 3G, Cellular, PCS
2 4 6 8 10 12 • Fixed Wireless, Pager Systems
Frequency (GHz)
• Driver Stage for low power applications
Symbol
Gmax
S21
FMIN
OIP3
P1dB
IDSS
gm
VP
BVGS
BVGD
Rth
Device Characteristics, T = 25°C
VDS=3V, IDQ=20mA (unless otherwise noted)
Maximum Available Gain
ZS=ZS*, ZL=ZL*
Insertion Gain
ZS=ZL= 50 Ohms
Minimum Noise Figure
ZS=ΓOPT , ZL=ZLOPT
Output Third Order Intercept Point
ZS=ZSOPT , ZL=ZLOPT
Output 1dB Compression Point
ZS=ZSOPT, ZL=ZLOPT
Saturated Drain Current
VDS = VDSP, VGS= 0V
Tranconductance:
VDS = VDSP, VGS= -0.25V
Pinch-Off Voltage:
VDS = 2.0V, IDS = 150µA
Gate-to-Source Breakdown Voltage
IGS = 0.3mA, drain open
Gate-to-Drain Breakdown Voltage
IGD = 0.3mA, VGS = -3.0V
Thermal Resistance, junction-to-lead
Test Condition
[1] = 100% Tested
f = 0.9 GHz
f = 1.9 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 1.9 GHz [1]
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 6 GHz
VDS=5.0V, IDQ=40mA
VDS=3.0V, IDQ=20mA
VDS=5.0V, IDQ=40mA
VDS=3.0V, IDQ=20mA
[1]
[1]
[1]
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
mS
V
V
V
oC/W
Min.
-
-
-
-
16.0
-
-
-
-
-
-
-
-
30
-
-1.5
-
-
-
Typ.
25.2
21.8
18.7
13.5
17.7
0.3
0.4
0.5
0.7
32
28
20
15
85
112
-1.0
-17
-17
110
Max.
-
-
-
-
19.4
-
-
-
-
-
-
-
-
140
-
-0.5
-8
-8
-
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101225 Rev. D
1 page  
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
PCB Pad Layout
SPF-2086TK Low Noise FET
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
SPF-2086TK
7"
1000
Part Symbolization
The part will be symbolized with the “P2T”
designator and a dot signifying pin 1 on the top
surface of the package.
P2T
Pin
Designation
1 Gate
2 Source
3 Drain
4 Source
Package Dimensions
P2T
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101225 Rev. D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SPF-2086TK.PDF ] | |
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