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PDF SPB-2026Z Data sheet ( Hoja de datos )
| Número de pieza | SPB-2026Z | |
| Descripción | InGaP Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class
AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a
surface-mountable plastic encapsulated package. This HBT amplifier is
made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability.
SPB-2026Z
Preliminary
1.7-2.2GHz 2W InGaP Amplifier
Pb RoHS Compliant
& Green Package
This product is well suited for use as a driver stage in macro/micro-cell
infrastructure equipment or as the final output stage in pico-cell
infrastructure equipment. It can run from a 3V to 6V supply. It is pre-
matched to ~5 ohms on the input for broadband performance and ease of
matching at the board level. It features an input power detector, on/off
power control, ESD protection, excellent overall robustness and a hand
reworkable and thermally enhanced SOF-26 package. This product is
RoHS and WEEE compliant.
Vcc = 5V
Functional Block Diagram
SSZPPB- 2-2002266
Product Features
SOF-26 Package
• P1dB = 33.8dBm @ 5V, 1960 MHz
• ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz
• On-chip Input Power Detector
• Low Thermal Resistance Package
• Power up/down control < 1μs
• Robust Class 1C ESD
RFIN
V bias = 5V
A c tiv e
Bias
Pow er
Up/Dow n
Co n tr o l
Pow er
Detec tor
RFOUT
Applications
• Macro/Micro-Cell driver stage
• Pico-Cell output stage
• GSM, CDMA, TDSCDMA, WCDMA
• Single and Multi-Carrier applications
Symbol
www.DataSheet4U.com
S21
Small Signal Gain
Parameters
Units
dB
P1dB
Output Power at 1 dB Compression
IM3
Channel
Power
S11
S22
NF
Third Order Suppression
_22 dBm per tone, 1MHz spacing
WCDMA Channel Power tested
with 64 Channels FWD
Input Return Loss
Output Return Loss
Noise Figure
-55dBc ACP
-45dBc ACP
-55dBc ACP
-45dBc ACP
-55dBc ACP
-45dBc ACP
dBm
dBc
dBm
dBm
dBm
dB
dB
dB
Frequency
1842 MHz
1960 MHz
2140 MHz
1842 MHz
1960 MHz
2140 MHz
1842 MHz
1960 MHz
2140 MHz
1842MHz
1960MHz
2140MHz
1960 MHz
1960 MHz
1960 MHz
Min.
12.2
12.1
31.3
-42
16
8
Typ.
13.6
13.7
13.6
33.9
33.8
32.8
-49
-45
-48
23
25
23
25
22
25
21
12
5.2
Max.
15.2
15.1
6.2
Vdet Range
ICQ
Voltage Range for CW Pout=13dBm to 33dBm
Quiescent Current (Vcc = 5V)
V
mA
0.85 to 1.4
395 445 485
IVPC
Ileak
RTH, j-l
Power Up Control Current (Vpc = 5V)
Vcc Leakage Current (Vcc = 5V, Vpc = 0V)
Thermal Resistance (junction - lead)
mA
μA
°C/W
2.1
10
12
Test Conditions:
Vcc = 5V
ICQ = 445mA Typ.
TL = 25°C
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-105436 Rev D
1 page  
Preliminary
SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier
Typical RF Performance (1930 - 1990MHz Application Circuit)
Single Carrier ACP vs. Ch. Pwr. @1960MHz
-20
25C ______
-30 -40C - - - - - -
85C _ _ _
-40
Dual Carrier ACP vs. Ch. Pwr. @1960MHz
-20
25C ______
-30 -40C - - - - - -
85C _ _ _
-40
-50 -50
-60
WCDMA with 64 DPCH
-70
14 16 18 20 22
Ch. Pwr. (dBm)
Source ACPR
24 26
-60
WCDMA with 64 DPCH and 5MHz spacing
-70
14 15 16 18 20
Ch. Pwr. (dBm)
Source ACPR
22 24 26
IM3 vs. Freq. (22dBm Output Tones)
-20
-20
-30 -30
-40 -40
-50
-60
-70
1.93
1.94 1.95 1.96 1.97
Frequency (GHz)
25C
-40C
85C
1.98
1.99
-50
-60
-70
14
IM3 vs. Tone Power @1960MHz
25C
-40C
85C
16 18 20 22 24 26
Pout per tone (dBm)
28
36
34
32
30
28
26
1.93
P1dB vs. Frequency
25C
-40C
85C
1.94
1.95
1.96
1.97
Frequency (GHz)
1.98
1.99
Pin vs. Pout @1960MHz
34
30
26
22
25C
18
-40C
14 85C
10
0 2 4 6 8 10 12 14 16 18 20 22 24
Pin (dBm)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-105436 Rev D
5 Page 
2110 - 2170MHz Application Circuit (Vcc & Vpc = 5.0V)
Preliminary
SPB-2026Z 1.7-2.2 GHz 2W InGaP Amplifier
Vcc
Note: Electrical Lengths referenced to center
of Shunt components and cuts on traces
Er=3.9
2oz copper
GETEK ML200D 10mils
TanD=.0089
Frequency=2140MHz
R2
0
RF
IN C5 Zo=27.7
E=4.8°
10pF
Zo=30.5
E=17.1°
C4
0.1uF
Zo=30.5
E=4.1°
C6
3.3pF
Zo=21.7
E=2.4°
1
2
3
Reference Plane
for Electrical Lengths
@ end of lead
Bias 6
Zo=20
5
E=3.7°
SPB-2026Z
4
Zo=14.8
E=6.5°
Zo=14.7
E=10.3°
Zo=14.7
E=11.8°
L1
20nH
Zo=14.8
E=4.9°
C3
0.1uF
C2
5.6pF
Zo=24.3
E=4.7°
Zo=27.7
E=11.4°
VPC
R1
1.02K 1%
C9
.1uF
R3
4.02K 1%
2110 - 2170MHz Evaluation Board Layout (Vcc & Vpc = 5.0V)
Board material GETEK, 10mil thick, Er=3.9, 2 oz. copper
VDET
R4*
47K * R4 simulates external circuit loadingto ground.
Recommended load range is 10K-100K range
may be removed if VDETECT is not used
C1
1uF
Zo=27.7
E=6.2°
C7
2.2pF
RF
C8 OUT
10pF
R2 Trim
C1
C3
C4 C2 Trim
C6
C5
C9
R3
R1
C8
L1 C7
R4
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
11
http://www.sirenza.com
EDS-105436 Rev D
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SPB-2026Z.PDF ] | |
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