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PDF SGL-0363Z Data sheet ( Hoja de datos )

Número de pieza SGL-0363Z
Descripción Low Noise Amplifier Silicon Germanium
Fabricantes Sirenza Microdevices 
Logotipo Sirenza Microdevices Logotipo



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Product Description
Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is
designed for 2.7 to 3.3V battery operation. The matching networks are
implemented externally which allows for optimum narrow-band performance
with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC
uses the latest Silicon Germanium HBT process.
SGL-0363Z
Preliminary
Pb RoHS Compliant
& Green Package
5-2000 MHz Low Noise Amplifier
Silicon Germanium
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Simplified Device Schematic
Vpc
Gnd
Active Bias
Network
RF Out
Narrow-band
Matching
Network
Narrow-band
Matching
RF In Network
Gnd
Product Features
Lead Free, RoHS Compliant & Green Package
Low Power Consumption, 5.7mA @ 3.3V
External Input Noise Match
High Gain and Low Noise,
20dB and 1.1dB respectively @ 900MHz
Operates from 2.7 to 3.3V
Power Shutdown Capability using VPC
500V ESD, Class 1B
Small Package: SOT-363
High input overdrive capability, +18dBm
Applications
Low Power LNA for ISM,
Cellular and Mobile Communications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
S21 Small Signal Gain
200 MHz
21
dB 450 MHz
20
900 MHz
17
20
23
P1dB Output Power at 1dB Compression
dBm
200 MHz
450 MHz
900 MHz
1.1
2.2
2.5
IIP3 Input Third Order Intercept Point
dBm
200 MHz
450 MHz
900 MHz
-3.8
-2.4
-7.1
NF Noise Figure
dBm
200 MHz
450 MHz
900 MHz
1.0
1.1
1.1
IRL Input Return Loss
dBm
200 MHz
450 MHz
900 MHz
14
12
15
ORL
Output Return Loss
dBm
200 MHz
450 MHz
900 MHz
20
19
12
S12 Reverse Isolation
dBm
200 MHz
450 MHz
900 MHz
24
25
27
ID Device Operating Current
RTH, j-l
Thermal Resistance (junction - lead)
Test Conditions:
VS = 3.3V
ID = 5.7mA Typ.
TL = 25°C
ZS = ZL = 50 Ohms
mA
°C/W
4.8 5.7
173
IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm
Different Application Circuit per Band
6.6
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104341 Rev D

1 page




SGL-0363Z pdf
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
900 MHz Application Circuit Data, VS= 3.3V, ID= 5.7mA
Note: Tuned for NF
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
870
0
-5
-10
-15
-20
-25
-30
870
-30
Noise Figure vs. Frequency
85C
25C
880 890 900 910
Frequency (MHz)
920
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
S11
S12
S22
880 890 900 910
Frequency (MHz)
920
IM3 vs. Tone Power @900MHz
930
930
-40
-50
-60
-70
-80
-19
25C
-40C
85C
-17 -15 -13 -11
-9
Pout per tone (dBm)
-7
-5
24 Gain vs. Frequency
22
20
S21_25C
18 S21_-40C
S21_85C
16
870 880 890 900 910 920 930
Frequency (MHz)
20
19
18
17
16
15
14
13
12
11
870
OIP3 vs. Freq. (-15dBm Output Tones)
25C
-40C
85C
880 890 900 910 920 930
Frequency (MHz)
6
5
4
3
2
1
0
-1
-2
870
P1dB vs. Frequency
880 890 900 910
Frequency (MHz)
25C
-40C
85C
920 930
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104341 Rev D

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