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PDF SGA-4386Z Data sheet ( Hoja de datos )
| Número de pieza | SGA-4386Z | |
| Descripción | Cascadable SiGe HBT MMIC Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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SGA-4386
Product Description
SGA-4386ZThe SGA-4386 is a high performance SiGe HBT MMIC Amplifier. A
Pb RoHS Compliant
& Green Package
Darlington configuration featuring 1 micron emitters provides high DC-4500 MHz, Cascadable
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
SiGe HBT MMIC Amplifier
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a post Product Features
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu- •Now available in Lead Free, RoHS
factured with green molding compounds that contain no antimony Compliant, & Green Packaging
trioxide nor halogenated fire retardants.
• High Gain : 14.6 dB at 1950 MHz
Gain & Return Loss vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
24 0
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
18
IRL
12
6
ORL
-10
GAIN
-20
-30
0 -40
012345
Frequency (GHz)
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
15.0 17.0 18.5
dB 1950 MHz
14.6
2400 MHz
13.7
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
15.3
13.0
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
28.9
26.9
Bandwidth Determined by Return Loss (>10dB)
MHz
4500
IRL Input Return Loss
dB 1950 MHz
13.2
ORL Output Return Loss
dB 1950 MHz
15.2
NF Noise Figure
dB 1950 MHz
3.1
VD Device Operating Voltage
V
2.9 3.2
3.5
ID Device Operating Current
mA
41 45 49
RTH, j-l Thermal Resistance (junction to lead)
°C/W
Test Conditions:
VS = 8 V
RBIAS = 110 Ohms
ID = 45 mA Typ.
TL = 25ºC
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 800221
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100641 Rev. G
1 page | ||
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