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PDF SGA-3386 Data sheet ( Hoja de datos )
| Número de pieza | SGA-3386 | |
| Descripción | Cascadable SiGe HBT MMIC Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
The SGA-3386 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
SGA-3386
SGA-3386Z Pb RoHS Compliant
& Green Package
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
20
VD= 2.6 V, ID= 35 mA (Typ.)
0
GAIN
15
IRL
10
-10
-20
ORL
5
-30
0 -40
012345
Frequency (GHz)
Product Features
•Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 15.3 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
15.5 17.0 19.0
dB 1950 MHz
15.3
2400 MHz
14.4
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
12.3
10.7
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
24.3
23.8
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
IRL Input Return Loss
dB 1950 MHz
17.0
ORL Output Return Loss
dB 1950 MHz
24.2
NF Noise Figure
dB 1950 MHz
3.5
VD Device Operating Voltage
V
2.3 2.6
2.9
ID Device Operating Current
mA
31 35 39
RTH, j-l Thermal Resistance (junction to lead) °C/W
Test Conditions:
VS = 5 V
RBIAS = 68 Ohms
ID = 35 mA Typ.
TL = 25ºC
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100633 Rev. E
1 page | ||
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| PDF Descargar | [ Datasheet SGA-3386.PDF ] | |
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