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PDF SGA-2286 Data sheet ( Hoja de datos )
| Número de pieza | SGA-2286 | |
| Descripción | Cascadable SiGe HBT MMIC Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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SGA-2286
Product Description
The SGA-2286 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between junc-
tions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only 2 DC-block-
ing capacitors, a bias resistor and an optional RF choke are re-
quired for operation.
SGA-2286Z Pb RoHS Compliant
& Green Package
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS Product Features
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 14 dB at 1950 MHz
Gain & Return Loss vs. Freq. @TL=+25°C
24
0
• Cascadable 50 Ohm
• Operates From Single Supply
18
GAIN
12 IRL
6
ORL
• Low Thermal Resistance Package
-10
Applications
-20
• PA Driver Amplifier
-30 • Cellular, PCS, GSM, UMTS
0 -40
012345
Frequency (GHz)
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
dB
850 MHz
13.5 15.0 16.5
dB 1950 MHz
14.0
dB 2400 MHz
12.6
P1dB
Output Power at 1dB Compression
dBm
dBm
850 MHz
1950 MHz
8.3
7.0
OIP3 Output Third Order Intercept Point
dBm
dBm
850 MHz
1950 MHz
20.0
19.4
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
IRL Input Return Loss
dB 1950 MHz
16.8
ORL Output Return Loss
dB 1950 MHz
19.5
NF Noise Figure
dB 1950 MHz
3.5
VD Device Operating Voltage
V
1.9 2.2
2.5
ID Device Operating Current
mA
17 20 23
RTH, j-l Thermal Resistance (junction to lead) °C/W
Test Conditions:
VS = 5 V
ID = 20 mA Typ.
RBIAS = 140 Ohms TL = 25ºC
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = -10 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100625 Rev D
1 page | ||
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