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PDF SGA-0363Z Data sheet ( Hoja de datos )
| Número de pieza | SGA-0363Z | |
| Descripción | Silicon Germanium Cascadeable Gain Block | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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SGA-0363
Preliminary
Product Description
The SGA-0363 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
SGA-0363Z Pb RoHS Compliant
& GrePenrePlaicmkaigneary
DC-5000 MHz, Silicon Germanium
Cascadeable Gain Block
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Small Signal Gain vs. Frequency
25
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-5000 MHz Operation
• Single Voltage Supply
• Low Current Draw: 11mA at 2.5V typ.
• High Output Intercept: 14 dBm typ. at 1950MHz
20
15
10
5
0
0123456
Frequency GHz
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Frequency
Units
Min.
Typ.
Max.
P1dB
Output Power at 1dB Compression
850 MHz
1950 MHz
2400 MHz
dBm
dBm
dBm
2.3
2.3
1.6
IP3 Third Order Intercept Point
850 MHz
1950 MHz
2400 MHz
dBm
dBm
dBm
14.2
14.0
13.1
S21 Small Signal Gain
850 MHz
1950 MHz
2400 MHz
dB
dB
dB
19.6
17.2
16.2
BW3dB
VSWRIN
VSWROUT
3dB Bandwidth
Input VSWR
Output VSWR
S12 Reverse Isolation
DC - 4500MHz
DC - 4500MHz
850 MHz
1950 MHz
2400 MHz
MHz
-
-
dB
dB
dB
5000
1.8:1
1.7:1
24.0
22.8
22.1
NF Noise Figure
1950 MHz
dB
3.0
VD
ID
RTH, j-l
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
Test Conditions:
VS = 5 V
ID = 11 mA Typ.
RBIAS = 220 Ohms TL = 25ºC
V 2.5
mA 9
11
ºC/W
255
OIP3 Tone Spacing = 1 MHz, Pout per tone = -12 dBm
ZS = ZL = 50 Ohms
13
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101495 Rev D
1 page  
Preliminary
Preliminary
SGA-0363 DC-5.0 GHz 2.5V SiGe Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-363 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101495 Rev D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SGA-0363Z.PDF ] | |
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