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Número de pieza | CED83A3 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CED83A3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CED83A3/CEU83A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 80A, RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 9mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
80
350
70
0.56
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
875
35
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
50
Units
C/W
C/W
Rev 1. 2005.August
6 - 126
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CED83A3.PDF ] |
Número de pieza | Descripción | Fabricantes |
CED83A3 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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