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PDF FDS8884 Data sheet ( Hoja de datos )
| Número de pieza | FDS8884 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2006
FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
AD FREE I
Features
Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
Low gate charge
100% RG Tested
RoHS Compliant
DD
D
D
SO-8
S SSG
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current Continuous
Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/oC
oC
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D =0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
1E-3
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
103
FDS8884 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS8884.PDF ] | |
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