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Número de pieza | FDD8580 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD8580 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! July 2006
FDD8580/FDU8580
N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ
Features
General Description
tm
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A
Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A
Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
www.DataSheet4U.com
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package Limited)
ID -Continuous (Die Limited)
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
RθJA
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD8580
FDU8580
Device
FDD8580
FDU8580
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
G
S
Ratings
20
±20
35
58
159
66
49.5
-55 to 175
Units
V
V
A
mJ
W
°C
3.03 °C/W
100 °C/W
52 °C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2006 Fairchild Semiconductor Corporation
FDD8580/FDU8580 Rev. A
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1 0.01
PDM
0.01
0.005
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4 10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
101
FDD8580/FDU8580 Rev. A
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDD8580.PDF ] |
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