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PDF CMT08N50 Data sheet ( Hoja de datos )

Número de pieza CMT08N50
Descripción POWER FIELD EFFECT TRANSISTOR
Fabricantes Champion 
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CMT08N50
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Top View
SYMBOL
D
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G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
θJC
θJA
TL
Value
8.0
32
±20
±40
125
40
-55 to 150
320
1.0
62.5
260
Unit
A
V
V
W
mJ
/W
2003/03/31 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 1

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CMT08N50 pdf
CMT08N50
POWER FIELD EFFECT TRANSISTOR
2003/03/31 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 5

5 Page










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