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PDF STS4DNFS30 Data sheet ( Hoja de datos )
| Número de pieza | STS4DNFS30 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STS4DNFS30
N-channel - 30V - 0.044Ω - 4.5A SO-8
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
STS4DNFS30
Schottky
VDSS
30V
IF(AV)
4.5A
RDS(on)
<0.055Ω
VRRM
30V
ID
4.5A
VF(MAX)
0.53V
Description
SO-8
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing a large variety of DC-DC
converters for printers, portable equipment.
Internal schematic diagram
Applications
■ Switching application
www.DataSheet4U.com
Order codes
Part number
STS4DNFS30
Marking
S4DNFS30
Package
SO-8
Packaging
Tape & reel
July 2006
Rev 1
1/12
www.st.com
12
1 page  
STS4DNFS30
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test Conditions
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
Min. Typ. Max Unit
9 ns
17 ns
15 ns
6 ns
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.5A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5A, di/dt = 100A/µs
VDD = 15V, Tj = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
4.5 A
13 A
1.2 V
22 ns
14.3 nC
1.3 A
5/12
5 Page 
STS4DNFS30
5 Revision history
Table 9. Revision history
Date
Revision
19-Jul-2005
1 First release
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STS4DNFS30.PDF ] | |
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