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Número de pieza | TMF3202Z | |
Descripción | N-Channel Dual-Gate MOSFET | |
Fabricantes | TACHYONICS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TMF3202Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Preliminary Specification
N-Channel Dual-Gate MOSFET
TMF3202Z
□ Description
The TMF3202Z is an enhancement type N-channel field-effect
transistor. The source and substrate are interconnected. Internal
bias circuits enable DC stabilization and a very good cross-
modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage
surges. The transistor has a SOT343 micro-miniature plastic
package.
□ Features
- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□ Applications
www.DataSheet4U.com
- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
SOT343
Unit in mm
23
14
1. SOURCE 3. GATE 2
2. DRAIN 4. GATE 1
□ Absolute Maximum Ratings (Ta = 25 ℃)
Parameter
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
VDS
ID
IG1
Ptot
Ts tg
Tj
Ratings
10
30
±10
200
-65 ~ 150
150
Caution : Electro Static Discharge sensitive device, observe handling precaution
Unit
V
mA
mA
mW
℃
℃
October. 2005.
Page 1 of 8
http://www.tachyonics.co.kr
Rev. 1.0
1 page Preliminary Specification
□ Graphs
TMF3202Z
20
16
12
8
4
0
0 20 40 60 80 100
IG1 [uA]
VDS= 5V, V G2-S = 4V, Tj = 25 ℃
Fig6. Drain current as a function of gate1 current
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGG [V]
VDS= 5V, V G2-S = 4V, RGB=62㏀, Tj = 25 ℃
Fig7. Drain current as a function of gate1
supply voltage
20
RG1 = 33KΩ
18
39KΩ
16
14 51KΩ
12 62KΩ
75KΩ
10
92KΩ
8 100KΩ
6
4
2
0
0123456
VGG=VDS [V]
V G2-S = 4V, Tj = 25 ℃, RGB= (Connected to VGG)
Fig8. Drain current as a function of gate1 and
drain supply voltage ; see Fig1
14
12 VGG = 5V
4.5V
10 4V
3.5V
8
3V
6
4
2
0
0123456
VG2-S [V]
VDS= 5V, Tj = 25 ℃, RGB=62㏀
Fig9. Drain current as a function of gate2 voltage
October. 2005.
Page 5 of 8
http://www.tachyonics.co.kr
Rev. 1.0
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TMF3202Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
TMF3202Z | N-Channel Dual-Gate MOSFET | TACHYONICS |
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