|
|
PDF TMF3201J Data sheet ( Hoja de datos )
| Número de pieza | TMF3201J | |
| Descripción | Dual N-Channel Dual-Gate MOSFET | |
| Fabricantes | TACHYONICS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TMF3201J (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Preliminary Specification
Dual N-Channel Dual-Gate MOSFET
TMF3201J
□ Description
The TMF3201J is an N-channel enhancement type, dual-insulated
gate, field-effect transistor that utilizes MOS construction.
It is consists of two equal dual gate MOSFET amplifiers with
shared source and gate2 leads. The source and substrate are
interconnected. Internal bias circuits enable DC stabilization and a
very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT363 micro-
miniature plastic package.
SOT363
Unit in mm
□ Features
- Two AGC amplifiers in a single package
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure
□ Applications
www.DataSheet4U.com
-Two gain controlled input stage for UHF and VHF tuners
- Professional communications equipment
1. GATE 1(1)
2. GATE 2
3. GATE 1(2)
4. DRAIN (2)
5. SOURCE
6. DRAIN (1)
□ Absolute Maximum Ratings (Ta = 25 ℃)
P arame te r
Per MOSFET ; unless otherwise specified
Drain-Source Voltage
Drain Current
Gate 1 Current
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
VDS
ID
IG1
Ptot
Ts tg
Tj
Ratings
10
30
±10
200
-65 ~ 150
150
Caution : Electro Static Discharge sensitive device, observe handling precaution
Unit
V
mA
mA
mW
℃
℃
January 2005.
Page 1 of 8
http://www.tachyonics.co.kr
Rev. 1.0
1 page  
Preliminary Specification
□ Graphs For One MOSFET
TMF3201J
20
16
12
8
4
0
0 20 40 60 80 100
IG1 [uA]
VDS= 5V, V G2-S = 4V, Tj = 25 ℃
Fig6. Drain current as a function of gate1 current
16
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGG [V]
VDS= 5V, V G2-S = 4V, RG1=62㏀, Tj = 25 ℃
Fig7. Drain current as a function of gate1
supply voltage
20
RG1 = 33KΩ
18
39KΩ
16
14 51KΩ
12 62KΩ
75KΩ
10
92KΩ
8 100KΩ
6
4
2
0
0123456
VGG=VDS [V]
V G2-S = 4V, Tj = 25 ℃, RG1= (Connected to VGG)
Fig8. Drain current as a function of gate1 and
drain supply voltage ; see Fig1
14
12 VGG = 5V
4.5V
10 4V
3.5V
8
3V
6
4
2
0
0123456
VG2-S [V]
VDS= 5V, Tj = 25 ℃, RG1=62㏀
Fig9. Drain current as a function of gate2 voltage
January. 2005.
Page 5 of 8
http://www.tachyonics.co.kr
Rev. 1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TMF3201J.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TMF3201J | Dual N-Channel Dual-Gate MOSFET | TACHYONICS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |