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PDF MMJT9435 Data sheet ( Hoja de datos )
| Número de pieza | MMJT9435 | |
| Descripción | Bipolar Power Transistors PNP Silicon | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AWW
9435
9435
A
WW
= Specific Device Code
= Assembly Location
= Work Week
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 5
1
Publication Order Number:
MMJT9435/D
1 page  
1000
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
100
MMJT9435
10
1.0
0.1
5.0 ms
0.5 ms
100 ms
10
0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 9. Current−Gain Bandwidth Product
0.01
0.001
0.1
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
1.0 10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
Figure 10. Active Region Safe Operating Area
4.0
3.0
TC
2.0
1.0
TA
0
25
50 75 100 125
T, TEMPERATURE (°C)
Figure 11. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
150
1.0
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
RqJA(t) = r(t) qJA
qJA = 174°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) qJA(t)
0.01 0.1
1.0
t, TIME (seconds)
Figure 12. Thermal Response
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100 1000
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMJT9435.PDF ] | |
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