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PDF MCR310 Data sheet ( Hoja de datos )

Número de pieza MCR310
Descripción Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
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MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol Value
Unit
Peak Repetitive Forward and Reverse
Blocking Voltage(1)
(TJ = −40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
Volts
400
600
800
On-State RMS Current (TC = 75°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = −40 to 110°C)
Circuit Fusing (t = 8.3 ms)
IT(RMS)
ITSM
I2t
10 Amps
100 Amps
40 A2s
Peak Gate Voltage (t p 10 ms)
Peak Gate Current (t p 10 ms)
Peak Gate Power (t p 10 ms)
Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
VGM
IGM
PGM
PG(AV)
TJ
Tstg
±5 Volts
1 Amp
5 Watts
0.75 Watt
−40 to +110 °C
−40 to +150 °C
8 in.-lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA
60 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
10 AMPERES RMS
400 thru 800 VOLTS
G
AC
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 3
MCR310−xG
AYWW
x = 6, 8 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MCR310−6
MCR310−6G
TO220AB
TO220AB
(Pb−Free)
500/Box
500/Box
MCR310−8
TO220AB
500/Box
MCR310−8G
TO220AB
(Pb−Free)
500/Box
MCR310−10
TO220AB
500/Box
MCR310−10G
TO220AB
(Pb−Free)
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Publication Order Number:
MCR310/D

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