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PDF MBR40H35PT Data sheet ( Hoja de datos )
| Número de pieza | MBR40H35PT | |
| Descripción | Dual Common Cathode Schottky Rectifier | |
| Fabricantes | Vishay Siliconix | |
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MBR40H35PT, MBR40H45PT, MBR40H50PT, MBR40H60PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
Diode variations
40 A
35 V, 45 V, 50 V, 60 V
400 A
0.55 V, 0.60 V
175 °C
TO-247AD
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
VRRM
VRWM
VDC
IF(AV)
EAS
IFSM
35
35
35
45 50
45 50
45 50
40
80
400
60 V
60 V
60 V
A
mJ
A
Peak repetitive reverse surge current per diode (1)
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
IRRM
ERSM
VC
2.0 1.0
30 25
25
A
mJ
kV
Voltage rate of change at (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
TSTG
10 000
- 65 to + 175
- 65 to + 175
V/μs
°C
°C
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
Revision: 13-Aug-13
1 Document Number: 88794
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR40H35PT.PDF ] | |
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