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PDF MBR10H100CT Data sheet ( Hoja de datos )
| Número de pieza | MBR10H100CT | |
| Descripción | SWITCHMODE Power Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MBR10H100CT
SWITCHMODE]
Power Rectifier
100 V, 10 A
Features and Benefits
• Low Forward Voltage: 0.61 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 10 A Total (5.0 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 Units Per Plastic Tube
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1 23
TO−220AB
CASE 221A
PLASTIC
AYWW
B10H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B10H100 = Device Code
G = Pb−Free Package
AKA
= Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBR10H100CT
TO−220
50 Units/Rail
MBR10H100CTG TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 2
1
Publication Order Number:
MBR10H100CT/D
1 page  
MBR10H100CT
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 10. Test Circuit
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MBR10H100CT.PDF ] | |
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