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PDF BZX84C2V4ET1 Data sheet ( Hoja de datos )

Número de pieza BZX84C2V4ET1
Descripción Zener Voltage Regulators
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BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25°C
Ppk 225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina Sub-
strate, (Note 3) @ TA = 25°C
Derated above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
RqJA
TJ, Tstg
417
−65 to
+150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
1
http://onsemi.com
3
Cathode
1
Anode
1
2
3
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
xxx M G
G
1
xxx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BZX84CxxxET1 SOT−23 3000/Tape & Reel
BZX84CxxxET1G SOT−23 3000/Tape & Reel
(Pb−Free)
BZX84CxxxET3 SOT−23 10,000/Tape & Reel
BZX84CxxxET3G SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
BZX84C2V4ET1/D

1 page




BZX84C2V4ET1 pdf
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1 0.00001
1 10 100 0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
+150°C
+ 25°C
− 55°C
10 20 30 40 50 60 70 80
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
90
100 100
TA = 25°C
10 10
TA = 25°C
11
0.1 0.1
0.01 0
2 4 6 8 10
VZ, ZENER VOLTAGE (V)
12 0.0110
30 50 70
VZ, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50 HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20 40
60
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
80
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