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PDF STGB6NC60H Data sheet ( Hoja de datos )
| Número de pieza | STGB6NC60H | |
| Descripción | N-CHANNEL IGBT | |
| Fabricantes | ST Microelectronics | |
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STGB6NC60H
N-channel 600V - 7A - D2PAK
Very fast PowerMESH™ IGBT
General features
Type
STGB6NC60H
VCES
600V
VCE(sat)max
@25°C
<2.5V
IC
@100°C
7A
■ Low on voltage drop (Vcesat)
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications
■ High frequency inverters
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STGB6NC60HT4
Marking
GB6NC60H
Package
D²PAK
Packaging
Tape & reel
July 2006
Rev 2
1/14
www.st.com
14
1 page  
STGB6NC60H
Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A
RG= 10Ω, VGE = 15V,
Tj = 25°C (see Figure 17)
VCC = 390V, IC = 3A
RG = 10Ω, VGE = 15V,
Tj =125°C (see Figure 17)
VCC = 390V, IC = 3A,
RGE = 10Ω , VGE = 15V,
TJ = 25°C (see Figure 17)
VCC = 390V, IC = 3A,
RGE = 10Ω , VGE =15V,
Tj = 125°C (see Figure 17)
Min. Typ. Max. Unit
12 ns
5 ns
612 A/µs
13 ns
4.3 ns
560 A/µs
40 ns
76 ns
100 ns
60 ns
98 ns
124 ns
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG = 10Ω, VGE=15V,
Tj =25°C (see Figure 17)
20 µJ
68 µJ
88 µJ
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG = 10Ω, VGE = 15V,
Tj = 125°C (see Figure 17)
37 µJ
93 µJ
130 µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
5 Page 
STGB6NC60H
Package mechanical data
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
10
4.88
15
1.27
1.4
2.4
0º
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
TYP
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
4º
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
inch
TYP.
0.315
0.334
0.015
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
1
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| PDF Descargar | [ Datasheet STGB6NC60H.PDF ] | |
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