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PDF STD35NF06 Data sheet ( Hoja de datos )
| Número de pieza | STD35NF06 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD35NF06
N-CHANNEL 60V - 0.018Ω - 35A DPAK
STripFET™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD35NF06
60 V < 0.024 Ω 35 A
s TYPICAL RDS(on) = 0.018 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalance characteristics and less crit-
ical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
October 2001
Value
60
60
± 20
35
24.5
140
55
0.37
5
Unit
V
V
V
A
A
A
W
W/°C
V/ns
–55 to 175
°C
(1)ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/9
1 page  
Normalized Gate Threshold Voltage vs Temp.
STD35NF06
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD35NF06.PDF ] | |
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