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Número de pieza | STC12IE90HV | |
Descripción | Emitter Switched Bipolar Transistor | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STC12IE90HV
Emitter Switched Bipolar Transistor
ESBT® 900 V - 12 A - 0.083 Ω
Preliminary Data
General features
VCS(ON)
1V
IC
12A
RCS(ON)
0.083 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 900V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Aux Smps For Three Phase Mains
Description
The STC12IE90HV is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
234
1
TO247-4L HV
Internal schematic diagrams
Order codes
Part Number
Marking
STC12IE90HV
C12IE90HV
Package
TO247-4L HV
Packaging
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
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11
1 page STC12IE90HV
Electrical characteristics
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCS(dyn)
Collector-source
dynamic voltage
(1µs)
VCC =VClamp =400V
VGS =10V
IC = 6A
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
VCC =VClamp =400V
VGS =10V
IC = 6A
IB = 1.2A
tpeak =500ns
RG =47Ω
IBpeak = 6A (IC )
Min. Typ. Max. Unit
3.37 V
1.75 V
2.1 Electrical characteristics (curves)
Figure 1. DC current gain
Figure 2. Collector-source On voltage
Figure 3. Collector-source On voltage Figure 4. Base-source On voltage
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5 Page STC12IE90HV
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Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet STC12IE90HV.PDF ] |
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