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PDF BUL804 Data sheet ( Hoja de datos )

Número de pieza BUL804
Descripción HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! BUL804 Hoja de datos, Descripción, Manual

BUL804
High voltage fast-switching NPN Power Transistor
General features
NPN Transistor
High voltage capability
Low spread of dynamic parameters
)Minimum lot-to-lot spread for reliable operation
t(sVery high switching speed
ucIn compliance with the 2002/93/EC European
dDirective
Pro t(s)Description
lete ucThe device is manufactured using high voltage
dMulti-Epitaxial Planar technology for high
so roswitching speeds and medium voltage capability.
b PIt uses a Cellular Emitter structure with planar
- O teedge termination to enhance switching speeds
) lewhile maintaining the wide RBSOA.
t(s oThe device is designed for use as PFC in high
c bsfrequency ballast half Bridge voltage fed topology.
du - OApplications
Pro t(s)Electronic ballast for fluorescent lighting
te cDedicated for PFC solution in half-bridge
le uvoltage fed topology.
3
12
TO-220
Internal schematic diagram
Obsoolete ProdOrder codes
ObsPart Number
Marking
Package
Packing
BUL804
BUL804
TO-220
Tube
May 2006
Rev 2
1/10
www.st.com
10

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BUL804 pdf
BUL804
2.1 Electrical characteristics (curves)
Electrical characteristics
Figure 1. DC current gain
Figure 2. DC current gain
roduct(s)Figure 3. Collector-emitter saturation Figure 4. Base-emitter saturation
P t(s)voltage
voltage
OObbssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee ProducFigure 5. Inductive load switching time Figure 6. Resistive load switching time
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