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Número de pieza | STI270N4F3 | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STI270N4F3 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! STB270N4F3
STI270N4F3 - STP270N4F3
N-channel 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK
STripFET™ Power MOSFET
General features
Type
VDSS RDS(on)
STB270N4F3 40V <2.9mΩ
STI270N4F3 40V <2.5mΩ
STP270N4F3 40V <2.9mΩ
■ 100% avalanche tested
■ Standard threshold drive
ID
120A
160A
120A
PTOT
330W
330W
330W
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronics
unique “Single Feature Size™“strip-based
process with less critical alignment steps and
therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Applications
■ High current, switching application
– Automotive
3
2
1
TO-220
123
I²PAK
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB270N4F3
STI270N4F3
STP270N4F3
February 2007
Marking
270N4F3
270N4F3
270N4F3
Package
D²PAK
I²PAK
TO-220
Rev1
Packaging
Tape & reel
Tube
Tube
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1 page STB270N4F3 - STI270N4F3 - STP270N4F3
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=20 V, ID= 80A,
RG=4.7Ω, VGS=10V
(see Figure 15)
VDD=20 V, ID= 80A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min. Typ. Max. Unit
22 ns
180 ns
110 ns
45 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions Min
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
D²PAK
TO-220
I²PAK
Source-drain current
(pulsed)
D²PAK
TO-220
I²PAK
Forward on voltage
ISD=80A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=160A,
di/dt = 100A/µs,
VDD=32V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Typ.
70
225
3.2
Max Unit
160 A
120 A
640 A
480 A
1.5 V
ns
nC
A
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5 Page STB270N4F3 - STI270N4F3 - STP270N4F3
Package mechanical data
DIM.
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
inch
TYP.
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet STI270N4F3.PDF ] |
Número de pieza | Descripción | Fabricantes |
STI270N4F3 | N-CHANNEL Power MOSFET | ST Microelectronics |
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