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Número de pieza | STP30NF10 | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP30NF10 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STB30NF10
STP30NF10 - STP30NF10FP
N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB30NF10
STP30NF10
STP30NF10FP
VDSS
100V
100V
100V
RDS(on)
<0.045Ω
<0.045Ω
<0.045Ω
ID
35A
35A
35A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Sales type
STB30NF10T4
STP30NF10
STP30NF10FP
Marking
B30NF10
P30NF10
P30NF10FP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 2
1/16
www.st.com
16
1 page STB30NF10 - STP30NF10 - STP30NF10FP
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 30A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 30A,
di/dt = 100A/µs,
VDD = 55V, Tj = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
35 A
140 A
1.3 V
110 ns
390 nC
7.5 A
5/16
5 Page STB30NF10 - STP30NF10 - STP30NF10FP
Package mechanical data
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
10
4.88
15
1.27
1.4
2.4
0º
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
TYP
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
4º
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
inch
TYP.
0.315
0.334
0.015
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
1
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STP30NF10.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP30NF10 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STP30NF10 | N-CHANNEL Power MOSFET | ST Microelectronics |
STP30NF10 | N-CHANNEL Power MOSFET | STMicroelectronics |
STP30NF10FP | N-CHANNEL POWER MOSFET | ST Microelectronics |
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