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PDF TSFF5210 Data sheet ( Hoja de datos )
| Número de pieza | TSFF5210 | |
| Descripción | High Speed Infrared Emitting Diode | |
| Fabricantes | Vishay Siliconix | |
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TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
www.DataSheet4U.com
94 8390
Features
• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant
intensity
• Low forward voltage
e2
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared video data transmission between Cam-
corder and TV set.
• Free air data transmission systems with high
modulation frequencies or high data transmission
rate requirements.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 sec, 2 mm from case
Thermal resistance junction/
ambient
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1
250
100
- 40 to + 85
- 40 to + 100
260
300
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
1
1 page  
TSFF5210
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
www.DataSheet4U.ceoamrlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSFF5210.PDF ] | |
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