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PDF STF8NK85Z Data sheet ( Hoja de datos )

Número de pieza STF8NK85Z
Descripción N-CHANNEL Zener-Protected SuperMESH MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STP8NK85Z
STF8NK85Z
N-CHANNEL 850V -1.1- 6.7A TO-220/TO-220FP
Zener-Protected SuperMESH™MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
Pw
STP8NK85Z
STF8NK85Z
850 V
850 V
<1.4 6.7A 150 W
<1.4 6.7A 35 W
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE RATED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES
s SMPS
Figure 1: Package
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STP8NK85Z
STF8NK85Z
MARKING
P8NK85Z
F8NK85Z
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
September 2005
Rev. 5
1/12

1 page




STF8NK85Z pdf
Figure 9: Transconductance
STP8NK85Z - STF8NK85Z
Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations
Figure 11: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 14: Normalized BVDSS vs Temperature
5/12

5 Page





STF8NK85Z arduino
Table 10: Revision History
Date
02-Mar-2005
03-Mar-2005
26-Apr-2005
09-May-2005
06-Sep-2005
Revision
1
2
3
4
5
STP8NK85Z - STF8NK85Z
Description of Changes
First Release.
Modified value in table 7
Modified values in table 8 and inserted curves. Final datasheet.
Modified note1 and Application Scope
Inserted Ecopack indication
11/12

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