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PDF STP22NF03L Data sheet ( Hoja de datos )
| Número de pieza | STP22NF03L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP22NF03L
N-CHANNEL 30V - 0.038Ω - 22A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP22NF03L
30V <0.05Ω 22A
s TYPICAL RDS(on) = 0.038Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100°C
s APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Aug 2000
Value
30
30
±15
22
16
88
45
0.3
6
200
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
(1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V
1/8
1 page  
STP22NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP22NF03L.PDF ] | |
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