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PDF SS6610 Data sheet ( Hoja de datos )
| Número de pieza | SS6610 | |
| Descripción | (SS6610 / SS6611) High Efficiency Syncronous Step-up DC/DC Converter | |
| Fabricantes | Silicon | |
| Logotipo |  |
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SS6610/11
High Efficiency Synchronous
Step-up DC/DC Converter
FEATURES
High efficiency. (93% when VIN=2.4V, VOUT=3.3V,
IOUT=200mA)
Output current up to 500mA. (SS6610 at VIN=2.4V
and VOUT=3.3V)
Quiescent supply current of 20mA.
Power-saving shutdown mode (0.1µA typical).
Internal synchronous rectifier (no external diode
required).
On-chip low-battery detector.
Low battery hysteresis
Space-saving package: MSOP-8
APPLICATIONS
Palmtop & Notebook Computers.
PDAs
Wireless Phones
Pocket Organizers.
Digital Cameras.
Hand-Held Devices with 1 to 3 Cells of
NiMH/NiCd Batteries.
DESCRIPTION
The SS6610/SS6611 are high-efficiency step-up
DC/DC converters, with a start-up voltage as low
as 0.8V, and an operating voltage down to 0.7V.
Consuming only 20µA of quiescent current,
these devices include a built-in synchronous rec-
tifier that reduces size and cost by eliminating
the need for an external Schottky diode, and
improves overall efficiency by minimizing
losses.
The switching frequency can range up to
500KHz depending on the load and input volt-
age. The output voltage can be easily set; by
two external resistors or 1.8V to 5.5V; con-
necting FB to OUT to get 3.3V; or connecting
to GND to get 5.0V. The peak current of the
internal switch is fixed at 1.0A (SS6610) or
0.65A (SS6611) for design flexibility.
TYPICAL APPLICATION CIRCUIT
VIN +
47µF
ON OFF
Low Battery
Detection
SHDN
SS6610
SS6611
LX
OUT
LBI
REF
0.1µF
LBO
GND FB
22µH
Output 3.3V, 5.0V
or Adj. (1.8V to
+ 5.5V) up to
47µF 300mA
Low-battery
Detect Out
Rev.2.01 11/06/2003
www.SiliconStandard.com
1 of 16
1 page  
SS6610/11
TYPICAL PERFORMANCE CHARACTERISTICS
160 0.5
140
0.4
120
100
VOUT=5V (FB=GND)
0.3
80
60 0.2
40
20 VOUT=3.3V (FB=OUT)
0
0.0
Fig. 1
0.5 1.0 1.5 2.0 2.5 3.0
Input battery voltage (V)
No-Load Battery Current vs. Input Battery
3.5
0.1
0.01.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Supply Voltage (V)
Fig. 2 Shutdown Current vs. Supply Voltage
5.5
1.8
1.6
1.4 VOUT=5.0V (FB=GND)
1.2
1.0
0.8
0.6
0.4 VOUT=3.3V (FB=OUT)
0.2
0.0 0.01
Fig. 3
0.1 1 10
Output Current (mA)
100
Start-Up Voltage vs. Output Current
400
L=22µH
350 CIN=100µF
300 COUT=100µF
250
200 VOUT=3.3V (FB=OUT)
150
100
VOUT=5.0V (FB=GND)
50
0
0.5 1.0
Fig. 4
1.5 2.0 2.5 3.0 3.5 4.0 4.5
Input Voltage (V)
Turning Point between CCM & DCM
5.0
100
90
80
70 VIN=1.2V
60
50 VIN=2.4V
40 VIN=3.6V
30
20 VOUT=5.0V (FB=GND)
10 SS6610 (I LIMIT =1A)
0
0.01
Fig. 5
0.1 1 10 100 1000
Output Current (mA)
Efficiency vs. Load Current (ref. to Fig.33)
220
200 SS6610 (I LIMIT =1A)
180
160
140 VIN=3.6V
120
100
80
60 VIN=2.4V
40
20 VIN=1.2V
VOUT=5.0V
L=22µH
CIN=47µF
COUT=47µF
0
0 50 100 150 200 250 300 350 400 450 500 550 600 650
Output Current (mA)
Fig. 6 Ripple Voltage (ref. to Fig.33)
Rev.2.01 11/06/2003
www.SiliconStandard.com
5 of 16
5 Page 
PIN DESCRIPTIONS
PIN 1: FB-
PIN 2: LBI-
PIN 3: LBO-
Connecting to OUT to get +3.3V
output, connecting to GND to get
+5.0V output, or using a resistor
network to set the output voltage
from +1.8V to +5.5V.
Low-battery comparator input. In-
ternally set at +1.23V to trip.
Open-drain low battery comparator
output. Output is low when VLBI is
<1.23V. LBO is high impedance
during shutdown.
APPLICATION INFORMATION
Overview
The SS6610/11 series are high-efficiency, step-up DC/DC
converters, featuring a built-in synchronous
rectifier, which reduces size and cost by eliminating
the need for an external Schottky diode. The start-up
voltage of the SS6610 and SS6611 is as low as
0.8V and it operates with an input voltage down
to 0.7V. Quiescent supply current is only 20µA.
The internal P-MOSFET on-resistance is typically
0.3Ω to improve overall efficiency by minimizing AC
losses. The output voltage can be easily set; by two
external resistors for 1.8V to 5.5V; connecting FB
to OUT to get 3.3V; or connecting to GND to get
5.0V. The peak current of the internal switch is fixed
at 1.0A (SS6610) or 0.65A (SS6611) for design
flexibility. The current limits of the SS6610 and SS6611
are 1.0A and 0.65A respectively. The lower current
limit allows the use of a physically smaller inductor in
space-sensitive applications.
PFM Control Scheme
A key feature of the SS6610 series is a unique
minimum-off-time, constant-on-time, current-limited,
pulse-frequency-modulation (PFM) control scheme
(see BLOCK DIAGRAM) with ultra-low quiescent
SS6610/11
PIN 4: REF- 1.23V reference voltage. Bypass
with a 0.1µF capacitor.
PIN 5: SHDN- Shutdown input. High=operating,
low=shutdown.
PIN 6: GND- Ground
PIN 7: LX- N-channel and P-channel power
MOSFET drain.
PIN 8: OUT- Power output. OUT provides boot-
strap power to the IC.
current. The peak current of the internal N-MOSFET
power switch can be fixed at 1.0A SS6610) or
0.65A (SS6611). The switch frequency depends on
either loading conditions or input voltage, and can
range up to 500KHz. It is governed by a pair of one-
shots that set a minimum off-time (1µs) and a
maximum on-time (4µs).
Synchronous Rectification
Using the internal synchronous rectifier eliminates
the need for an external Schottky diode, reducing
the cost and board space. During the cycle of off-
time, the P-MOSFET turns on and shuts the N-
MOSFET off. Due to the low turn-on resistance
of the MOSFET, the synchronous rectifier signif-
cantly improves efficiency without an additional ex-
ternal Schottky diode. Thus, the conversion effi-
ciency can be as high as 93%.
Reference Voltage
The reference voltage (REF) is nominally 1.23V for
excellent T.C. performance. In addition, the REF pin can
source up to 100µA to external circuit with good load
regulation (<10mV). A bypass capacitor of 0.1µF is
required for proper operation and good performance.
Rev.2.01 11/06/2003
www.SiliconStandard.com
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet SS6610.PDF ] | |
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