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PDF 2SK3680-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3680-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3680-01
FUJI POWER MOSFET
Super FAP-G Series
200309
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit Remarks
Drain-source voltage
VDS
500
V
VDSX
500
V VGS=-30V
Continuous drain current
ID
±52 A
Pulsed drain current
ID(puls]
±208
A
Gate-source voltage
VGS ±30
V
Non-Repetitive
IAS 52 A Tch=25°C
Maximum avalanche current
Repetitive or
IAR
*1
26 A Tch<=150°C
Maximum avalanche current
*1
Non-Repetitive
EAS
802.7
mJ L=544µH
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
VCC=50V *2
kV/s VDS<=500V
Peak diode recovery dV/dt
dV/dt
5 kV/µs *3
Max. power dissipation
PD
2.50 W Ta=25°C
600 Tc=25°C
Operating and storage
Tch +150
°C
temperature range
Tstg -55 to +150 °C
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 IF <= -ID, -di/dt=50A/µs, VCC<= BVDSS, Tch<= 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=26A VGS=10V
ID=26A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=26A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=250V
ID=52A
VGS=10V
L=544µH Tch=25°C
IF=52A VGS=0V Tch=25°C
IF=52A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500
3.0
15
52
10
0.09
30
5350
760
42
80
103
190
49
114
36
40
1.00
0.83
19.0
5.0
25
250
100
0.11
8025
1140
63
120
155
285
74
171
54
60
1.50
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.208 °C/W
50.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3680-01.PDF ] | |
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