|
|
PDF 2SK3647-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3647-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK3647-01 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
2SK3647-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Foot Print Pattern
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100 V
VDSX *5
70 V
Continuous drain current
ID Tc=25°C
±41
A
Ta=25°C
±5.2 **
A
Pulsed drain current
ID(puls]
±164
A
Gate-source voltage
VGS
Non-repetitive Avalanche current IAS *2
±30 V Equivalent circuit schematic
41 A
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
EAS *1
dVDS/dt *4
204.7
20
mJ
kV/µs
D : Drain
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Tc=25°C
Ta=25°C
150
2.4 **
W
G : Gate
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
S1 : Source
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C *4 VDS <= 100V *5 VGS=-30V *6 t=60sec
Electrical characteristics (Tc =25°C unless otherwise specified)
f=60Hz
S2 : Source
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
ID=15A VGS=10V
Tch=25°C
Tch=125°C
ID=15A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
VCC=50V
ID=30A
VGS=10V
L=146µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
100
3.0
9
41
Typ.
10
34
18
1110
280
22
16
23
31
16
32
13
9
1.10
0.1
0.38
Max.
5.0
25
250
100
44
1665
420
33
24
35
47
24
48
20
14
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
Min. Typ.
Max. Units
0.833 °C/W
87.0 °C/W
52.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3647-01.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3647-01 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |