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PDF MGSF2N02EL Data sheet ( Hoja de datos )
| Número de pieza | MGSF2N02EL | |
| Descripción | N-Channel SOT-23 | |
| Fabricantes | ON Semiconductor | |
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MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
• Pb−Free Packages are Available
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• IDSS Specified at Elevated Temperature
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
20
± 8.0
ID
IDM
PD
TJ, Tstg
2.8
5.0
1.25
− 55 to
150
Vdc
Vdc
A
W
°C
Thermal Resistance
Junction−to−Ambient (Note 1)
Thermal Resistance
Junction−to−Ambient (Note 2)
RqJA
°C/W
100
300
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
2.8 A, 20 V
RDS(on) = 85 mW (max)
N−Channel
D
G
S
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 21
NT M
NT = Device Code
M = Date Code
PIN ASSIGNMENT
3
Drain
12
Gate Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
MGSF2N02EL/D
1 page  
MGSF2N02EL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AJ
A
L
3
BS
12
VG
C
DH
K
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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