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PDF PMN38EN Data sheet ( Hoja de datos )
| Número de pieza | PMN38EN | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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PMN38EN
N-channel TrenchMOS logic level FET
Rev. 01 — 13 January 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Logic level threshold
s Low threshold voltage
s Very fast switching
s Surface-mounted package
1.3 Applications
s Battery powered motor control
s Load switch in notebook computers
s High-speed switch in set top box power s Driver FET in DC-to-DC converters
supplies
1.4 Quick reference data
s VDS ≤ 30 V
s RDSon ≤ 38 mΩ
s ID ≤ 5.4 A
s Ptot ≤ 1.75 W
2. Pinning information
Table 1:
Pin
1, 2, 5, 6
3
4
Pinning
Description
drain (D)
gate (G)
source (S)
Simplified outline
654
123
SOT457 (TSOP6)
Symbol
D
G
mbb076 S
1 page  
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 3 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 2.8 A; see Figure 6 and 8
ID = 5 A; VDS = 15 V; VGS = 4.5 V;
see Figure 11 and 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
VDS = 15 V; RL = 12 Ω; VGS = 4.5 V; RG = 6 Ω
IS = 1.7 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
30 - - V
27 - - V
1 1.5 2 V
0.6 - - V
- - 2.2 V
- 0.01 1.0 µA
- - 10 µA
- 10 100 nA
- 31 38 mΩ
- 49.6 60.9 mΩ
- 38 46 mΩ
- 6.1 - nC
- 1.7 - nC
- 2.35 - nC
- 495 - pF
- 100 - pF
- 70 - pF
- 14 - ns
- 19 - ns
- 28 - ns
- 16 - ns
- 0.75 1.2 V
PMN38EN_1
Product data sheet
Rev. 01 — 13 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
PMN38EN
N-channel TrenchMOS logic level FET
9. Data sheet status
Level Data sheet status [1] Product status [2] [3]
I Objective data
Development
II Preliminary data
Qualification
III Product data
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
PMN38EN_1
Product data sheet
Rev. 01 — 13 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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