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Número de pieza | EDE1104AASE | |
Descripción | (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized | |
Fabricantes | Elpida Memory | |
Logotipo | ||
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DATA SHEET
1G bits DDR2 SDRAM
EDE1104AASE (256M words × 4 bits)
EDE1108AASE (128M words × 8 bits)
Description
Features
The EDE1104AASE is a 1G bits DDR2 SDRAM
organized as 33,554,432 words × 4 bits × 8 banks.
The EDE1108AASE is a 1G bits DDR2 SDRAM
organized as 16,777,216 words × 8 bits × 8 banks.
They are packaged in 68-ball FBGA (µBGA) package.
• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Double-data-rate architecture: two data transfers per
clock cycle
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst lengths: 4, 8
• /CAS Latency (CL): 3, 4, 5
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• SSTL_18 compatible I/O
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
• Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
• /DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
• FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
Document No. E0404E20 (Ver. 2.0)
Date Published April 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2003-2005
1 page EDE1104AASE, EDE1108AASE
Electrical Specifications
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit Notes
Power supply voltage
VDD
−1.0 to +2.3
V1
Power supply voltage for output
VDDQ
−0.5 to +2.3
V1
Input voltage
VIN −0.5 to +2.3
V1
Output voltage
VOUT
−0.5 to +2.3
V1
Storage temperature
Tstg −55 to +100
°C 1, 2
Power dissipation
PD 1.0
W1
Short circuit output current
IOUT
50
mA 1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit Notes
Operating case temperature
TC
0 to +95
°C 1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Data Sheet E0404E20 (Ver. 2.0)
5
5 Page EDE1104AASE, EDE1108AASE
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
CLK input pin capacitance
Input pin capacitance
Input/output pin capacitance
-6E
-5C
Symbol Pins
CCK CK, /CK
/RAS, /CAS,
CIN /WE, /CS,
CKE, ODT,
Address
min.
1.0
1.0
CI/O
DQ, DQS, /DQS,
RDQS, /RDQS,DM
2.5
2.5
Notes: 1. Matching within 0.25pF.
2. Matching within 0.50pF.
max.
2.0
2.0
3.5
4.0
Unit Notes
pF 1
pF 1
pF 2
pF 2
Data Sheet E0404E20 (Ver. 2.0)
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet EDE1104AASE.PDF ] |
Número de pieza | Descripción | Fabricantes |
EDE1104AASE | (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized | Elpida Memory |
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