(PDF) SPN3414 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN3414
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC
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No Preview Available ! www.DataSheet4U.com SPN3414 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOT-23-3L) PART MARKING 2006/04/20 Ver.3 Page 1 1 page SPN3414 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2006/04/20 Ver.3 Page 5 5 Page

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PDF SPN3414 Data sheet ( Hoja de datos )