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PDF TD62S051AFM Data sheet ( Hoja de datos )
| Número de pieza | TD62S051AFM | |
| Descripción | TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Bipolar Digital Integrated Circuit
Silicon Monolithic
TD62S051AFM
1-Channel Darlington Sink-Current Driver
TD62S051AFM
The TD62S051AFM is a 1-channel noninverting sink-current
driver with a PNP transistor at the first stage and a NPN
Darlington transistor at the second stage.
The driver incorporates output clamp diodes used to clamp the
counter electromotive force which is generated when driving an
inductive load. Because the driver operates by source input
current, it is optimal for interfacing with sink-current driven
general-purpose CMOS logic ICs and microprocessors. Also it is
optimal for driving relays and LEDs. When using the driver, pay
attention to the thermal conditions.
Features
· Ultra-small HSON6 package with heat sink on rear
· High output withstandard voltage: VCE (SUS) = 50 V (min)
· Large output current: IOUT = 500 mA (max)
· Built-in input resistor: RIN = 14 kΩ
· Input signal: Low Level Active
· Built-in output clamp diodes
Weight: 0.017 g (typ.)
Pin Connection (top view)
Basic Circuit Diagram
OUTPUT 1
COMMON 2
VCC 3
6 INPUT
5 P-GND
VCC
INPUT
14 kW
4 GND
COMMON
OUTPUT
GND
P-GND
Note 1: Diodes shown using dotted lines are parasitic. Do not use them.
Note 2: When using the driver, connect the P-GND pin to the GND pin.
Note 3: When using the driver, connect the P-GND pin to the heat sink on the rear of the package.
1 2001-12-05
1 page  
TD62S051AFM
9. tON, tOFF
INPUT VCC OPEN VOUT
Pulse
generator
(Note 6)
OUTPUT
CL = 15 pF
(Note 7)
tr tf
90%
INPUT
50%
10% 10%
50 ms
tON
90%
50%
tOFF
Note 6: Pulse width 50 ms, Duty cycle 10%
Output impedance 50 W, tr <= 5 ns, tf <= 10 ns
Note 7: CL includes probe and jig capacitance.
OUTPUT
90%
10%
5V
0
VOH
VOL
Caution on Application
1. The device does not include protectors such as an overcurrent protector and an overvoltage protector.
Applying excessive current or voltage may damage the device.
Thus, design with great care to prevent excessive current or voltage from being applied to the device.
The device may also be damaged by short-circuits between outputs and power supply/ground.
Take care when designing output, VCC and GND line.
2. Be sure to mount the device in the correct orientation. Make sure that the positive and negative
power supply pins are connected the right way round. Otherwise, the absolute maximum current
and power dissipation ratings may be exceeded and the device may break down or undergo
performance degradation, causing it to catch fire or explode, and resulting in injury.
5 2001-12-05
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TD62S051AFM.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| TD62S051AFM | TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic | Toshiba Semiconductor |
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