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Número de pieza | PBSS5420D | |
Descripción | PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PBSS5420D (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 — 29 September 2008
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4420D.
1.2 Features
I Very low collector-emitter saturation resistance
I Ultra low collector-emitter saturation voltage
I 4 A continuous collector current
I Up to 15 A peak current
I High efficiency leading to less heat generation
1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −400 mA
-
[1] -
-
[2] -
- −20
- −4
- −15
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ
1 page NXP Semiconductors
PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa272
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa273
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5420D_2
Product data sheet
Rev. 02 — 29 September 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page NXP Semiconductors
11. Soldering
PBSS5420D
20 V, 4 A PNP low VCEsat (BISS) transistor
3.45
1.95
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 16. Reflow soldering footprint SOT457 (SC-74)
5.3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 17. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PBSS5420D_2
Product data sheet
Rev. 02 — 29 September 2008
© NXP B.V. 2008. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PBSS5420D.PDF ] |
Número de pieza | Descripción | Fabricantes |
PBSS5420D | PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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