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PDF AOL1442 Data sheet ( Hoja de datos )
| Número de pieza | AOL1442 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOL1442
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1442 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOL1442 is Pb-free (meets ROHS & Sony
259 specifications). AOL1442L is a Green Product
ordering option. AOL1442 and AOL1442L are
electrically identical.
Features
VDS (V) = 30V
ID = 75A
(VGS = 10V)
RDS(ON) < 5mΩ (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
75
56
200
25
20
30
135
50
25
5
3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.2
44
2
Max
25
60
3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOL1442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
tA
=
L ⋅ ID
BV − VDD
70
60
50
40
30
20 TA=25°C
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100 50
40 TA=25°C
75
30
50
20
25
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOL1442.PDF ] | |
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