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Número de pieza | AOL1412 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AOL1412
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFETTM AOL1412 uses advanced trench technology
with a monolithically integrated Schottky diode to
provide excellent RDS(ON),and low gate charge. This
device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
Standard Product AOL1412 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1412L is a Green
Product ordering option. AOL1412 and AOL1412L are
electrically identical.
Features
VDS (V) = 30V
ID =85A (VGS = 10V)
RDS(ON) < 3.9mΩ (VGS = 10V)
RDS(ON) < 4.6mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
Bottom tab
connected to
S
G
drain
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C I
Current B
TC=100°C
Pulsed Drain Current
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD
PDSM
TJ, TSTG
Maximum
30
±12
85
84
200
27
21
40
240
100
50
5
3
-55 to 175
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AOL1412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
200 TC=25°C
150
100 TC=150°C
50
0
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
TJ(Max)=150°C
80 TA=25°C
60
40
20
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOL1412.PDF ] |
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