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PDF SUR70N02-04P Data sheet ( Hoja de datos )
| Número de pieza | SUR70N02-04P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUR70N02-04P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0037 @ VGS = 10 V
20
0.0061 @ VGS = 4.5 V
TO-252
Reverse Lead DPAK
ID (A)a
37
29
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
APPLICATIONS
D Synchronous Buck Converter
− Low Side
D Synchronous Rectifier
− Secondary Rectifier
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C
TC= 25_C
L = 0.1 mH
TA = 25_C
TC = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
"20
37a
70b
100
37
30
45
8.3a
93
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
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| PDF Descargar | [ Datasheet SUR70N02-04P.PDF ] | |
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