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PDF HY64UD16322M Data sheet ( Hoja de datos )
| Número de pieza | HY64UD16322M | |
| Descripción | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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HY64UD16322M Series
Document Title
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No.
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
History
Initial
Revised
- Change Pin Connection
- Improve tOE from 45ns to 30ns
- Correct State Diagram
Revised
- Correct Package Dimension
- Change Absolute Maximum Ratings
Revised
- DC Electrical Characteristics (ISB1,IDPD,ICC1)
- State Diagram
- Power Up Sequence
- Deep Power Down Sequence
- Read/Write Cycle Note
- Release standby current from 100µA to 120µA
Revised
- DC Electrical Characteristics (ICC1: 3mA -> 5mA)
Revised
- Add 70ns Part
- Power Up Sequence
Revised
- Improve ICC2@70ns 30mA to 25mA
- Improve ICC2@85ns 30mA to 20mA
- Improve Ambient Temperature C/E to E/I
(0°C~85°C/-25°C~85°C → -25°C~85°C/-40°C~85°C)
- Improve Maximum Absolute Ratings
(Vdd : -0.3V to 3.3V → -0.3V to 3.6V)
- Improve tOE@85ns 30ns to 20ns
Revised
- Pin Description
- Power Up & Deep Power Down Exit Sequence
Draft Date
Jan. 04. ’ 01
Jul. 03. ’ 01
Jul. 18. ’ 01
Oct. 06. ’ 01
Nov. 07. ’ 01
Dec. 20. ‘ 01
Feb. 27. ‘ 02
Mar. 11. ‘ 02
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
Revision 1.7
March. 2002
1
1 page  
HY64UD16322M Series
AC CHARACTERISTICS
Vdd=2.7V~3.3V, TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
# Symbol
Parameter
-70 -85
Min. Max. Min. Max.
Read Cycle
1 tRC Read Cycle Time
70 - 85 -
2 tAA Address Access Time
- 70 - 85
3 tACS Chip Select Access Time
- 70 - 85
4 tOE Output Enable to Output Valid
- 20 - 20
5 tBA /LB, /UB Access Time
- 70 - 85
6 tCLZ Chip Select to Output in Low Z
10 - 10 -
7 tOLZ Output Enable to Output in Low Z
5-5-
8 tBLZ /LB, /UB Enable to Output in Low Z
10 - 10 -
9 tCHZ Chip Disable to Output in High Z
0 20 0 30
10 tOHZ Out Disable to Output in High Z
0 20 0 30
11 tBHZ /LB, /UB Disable to Output in High Z
0 20 0 30
12 tOH Output Hold from Address Change
10 - 10 -
Write Cycle
13 tWC Write Cycle Time
70 - 85 -
14 tCW Chip Selection to End of Write
60 - 70 -
15 tAW Address Valid to End of Write
60 - 70 -
16 tBW /LB, /UB Valid to End of Write
60 - 70 -
17 tAS Address Set-up Time
0-0-
18 tWP Write Pulse Width
50 - 60 -
19 tWR Write Recovery Time
0-0-
20 tWHZ Write to Output in High Z
0 20 0 30
21 tDW Data to Write Time Overlap
30 - 30 -
22 tDH Data Hold from Write Time
0-0-
23 tOW Output Active from End of Write
5-5-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rising and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
See Below
AC TEST LOADS
DOUT
Z0=50 Ohm
RL=50 Ohm
CL1 =30 pF
VL=1.5 V
Note
1. Including jig and scope capacitance.
Revision 1.7
March. 2002
5
5 Page 
MARKING INFORMATION
Package
HY64UD16322M Series
Marking Example
FBGA
H Y U D 1 6 3 2 2M
css t
y y wwp
xxxxx
KOR
• HYUD16322M
HY
U
D
16
32
2
M
•c
• ss
•t
• yy
• ww
•p
• xxxxx
• KOR
Note
- Capital Letter
- Small Letter
Index
: Part Name
: HYNIX
: Power Supply
: Tech. + Classification
: Bit Organization
: Density
: Mode
: Version
: 3.0V(2.7V~3.3V)
: 1T+1C
: x16
: 32M
: 1CS with /UB,/LB;tCS
: 1st Generation
: Power Consumption
: Speed
: Temperature
: D – Low Low Power
: 70 – 70ns
85 – 85ns
: E – Extended(-25 ~ 85°C)
I – Industrial(-40 ~ 85°C)
: Year (ex : 01 = year 2001, 02= year 2002)
: Work Week ( ex : 12 = work week 12 )
: Process Code
: Lot No.
: Origin Country
: Fixed Item
: Non-fixed Item
Revision 1.7
March. 2002
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HY64UD16322M.PDF ] | |
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