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PDF APT40GP90J Data sheet ( Hoja de datos )
| Número de pieza | APT40GP90J | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
APT40GAPPT490G0P9J0J
900V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
EE
G C SOT-227
ISOTOP
"UL Recognized"
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol Parameter
• SSOA Rated
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
APT40GP90J
UNIT
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
900
±20
±30
68
32
160
160A @ 900V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
900
3 4.5 6
Volts
3.2 3.9
2.7
250
1000
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
7,000
Cies
1,000
500
Coes
100
50
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT40GP90J
180
160
140
120
100
80
60
40
20
0
0 200 400 600 800 1000
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.50
0.40
0.30
0.20
0.10
0
10-5
0.9
0.7
0.5 Note:
0.3
0.1 SINGLE PULSE
0.05
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Junction
temp (°C)
RC MODEL
0.0966
0.00997F
Power
(watts)
0.228
0.0158F
Case temperature(°C)
0.116
1.96F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
50
Fmax = min(fmax1, fmax 2 )
10
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
5
TJ = 125°C
TC = 75°C
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
D = 50 %
VCE = 600V
1 RG = 5Ω
Pdiss
=
TJ − TC
R θJC
10 20 30 40 50 60
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT40GP90J.PDF ] | |
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