|
|
Número de pieza | BSO315C | |
Descripción | SIPMOS Small-Signal-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSO315C (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! www.DataSheet4U.com
Preliminary data
BSO 315 C
SIPMOS® Small-Signal-Transistor
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
VDS
RDS(on)
ID
N
30
0.11
3.4
P
-30
0.25
V
Ω
-2.3 A
Type
BSO 315 C
Package
SO 8
Ordering Code
Q67041-S4014
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 Ω
ID = -1.8 A, VDD = -25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, Tjmax = 150 °C
IS = 2.9 A, VDS = 24 , di/dt = 200 A/µs
IS = -1.8 A, VDS = -24 , di/dt = -200 A/µs
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
NP
3.4
2.7
11.6
-2.3
-1.8
-7.2
25 -
- 35
0.2 0.2
6-
-6
±20 ±20
22
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
1999-09-22
1 page Power Dissipation (N-Ch.)
Ptot = f (TA)
Preliminary data
BSO 315 C
Power Dissipation (P-Ch.)
Ptot = f (TA)
BSO 315 C
2.2
W
BSO 315 C
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (N-Ch.)
ID = f (TA)
parameter: VGS≥ 10 V
BSO 315 C
3.6
A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
20 40 60 80 100 120 °C 160
TA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Drain current (P-Ch.)
ID = f (TA)
parameter: VGS≥ -10 V
BSO 315 C
-2.6
A
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0
20 40 60 80 100 120 °C 160
TA
Page 5
1999-09-22
5 Page Preliminary data
BSO 315 C
Avalanche Energy EAS = f (Tj) (N-Ch.)
parameter: ID = 2.9 A, VDD = 25 V
RGS = 25 Ω
30
Avalanche Energy EAS = f (Tj)
parameter: ID = -1.8 A, VDD = -25 V
RGS = 25 Ω
40
mJ
20
mJ
30
25
15 20
15
10
10
5
5
0
25
45
65
85 105 125 °C
165
Tj
Typ. gate charge (N-Ch.)
VGS = f (QGate)
parameter: ID = 3.4 A
BSO 315 C
16
V
0
25
45
65
85 105 125 °C
165
Tj
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = -2.3 A
BSO 315 C
-16
V
12 -12
10 -10
8
0,2 VDS max
6
0,8 VDS max
-8
-6
4 -4
2 -2
0
0
2
4
6
8 nC
12
QGate
0
0
Page 11
0,2 VDS max
0,8 VDS max
2 4 6 8 nC 11
QGate
1999-09-22
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet BSO315C.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSO315C | SIPMOS Small-Signal-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |