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PDF SI3861BDV Data sheet ( Hoja de datos )

Número de pieza SI3861BDV
Descripción Load Switch
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! SI3861BDV Hoja de datos, Descripción, Manual

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New Product
Load Switch with Level-Shift
Si3861BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
4.5 to 20
0.075 @ VIN = 10 V
0.120 @ VIN = 5.0 V
0.145 @ VIN = 4.5 V
ID (A)
"2.3
"1.9
"1.7
FEATURES
D 4.5-V Rated
D ESD Protected: 3000 V
D 105-mW Low rDS(on) TrenchFETr
D 4.5 to 20-V Input
D 1.5 to 8 -V Logic Level Control
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch,
VON/OFF
D Adjustable Slew-Rate
RoHS
COMPLIANT
DESCRIPTION
The Si3861BDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFETR is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
VIN
R1
Si3861BDV
4
Q2
6
2, 3
C1
6
ON/OFF
Ci
R2
5
Q1
1
R2
Co
VOUT
LOAD
GND
Switching Variation
10 R2 @ VIN = 5 V, R1 = 20 kW
tf
8
td(off)
6
4 tr
td(on)
2
IL = 1 A
VON/OFF = 3 V
CCio==110mmFF
0
0 2 4 6 8 10 12
R2 (kW)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
COMPONENTS
R1 Pull-Up Resistor
Typical 10 kW to 1 mW*
R2 Optional Slew-Rate Control
Typical 0 to 100 kW*
C1 Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S-51015—Rev. A, 23-May-05
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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SI3861BDV pdf
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
120 R2 @ VIN = 4.5 V, R1 = 300 kW
100 tf
80 td(off)
60 IVLO=N1/OAFF = 3 V
Ci = 10 mF
40 Co = 1 mF
20
tr
td(on)
0
0 20 40 60 80 100 120
R2 (kW)
Si3861BDV
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Dureation (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 150_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73343.
Document Number: 73343
S-51015—Rev. A, 23-May-05
www.vishay.com
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