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PDF IRGB4056DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGB4056DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 97188
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
IRGB4056DPbF
VCES = 600V
IC = 12A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.55V
C
E
GC
TO-220AB
G
Gate
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
C
Collector
E
Emitter
Max.
600
24
12
48
48
24
12
48
±20
±30
140
70
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
80
Max.
1.07
3.66
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
02/24/06
1 page  
800
700
600
500 EOFF
400
300 EON
200
100
0
0 10 20 30
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
500
450
400 EOFF
350
300
250 EON
200
150
100
50
0
25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
25
20 RG = 10Ω
RG = 22Ω
15
RG = 47Ω
10
RG = 100Ω
5
IRGB4056DPbF
1000
tdOFF
100
tF
tdON
10 tR
1
5 10 15 20 25
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
1000
tdOFF
100
tF
tdON
tR
10
0 25 50 75 100 125
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
25
20
15
10
0
0 10 20
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
30
5
0 25 50 75 100
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
125
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| PDF Descargar | [ Datasheet IRGB4056DPBF.PDF ] | |
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